Semiconductor memory device

ABSTRACT

According to one embodiment, a semiconductor memory device includes a stacked body, memory pillars, first and second insulation layers and an isolation region. The stacked body above a substrate includes conductive layers isolated from each other and stacked along a first direction crossing the substrate surface. The memory pillars extend through the stacked body along the first direction. The first insulation layer is provided above the memory pillars. The isolation region is provided higher than upper surfaces of the memory pillars in the stacked body along the first direction, and isolates the stacked body in a second direction crossing the first direction. The second insulation layer is provided on the first insulation layer and a side wall of the isolation region.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of and claims benefit under 35 U.S.C.§ 120 to U.S. application Ser. No. 17/184,094, filed Feb. 24, 2021,which is a continuation of and claims benefit under 35 U.S.C. § 120 toU.S. application Ser. No. 16/834,472, filed Mar. 30, 2020, which is acontinuation of and claims benefit under 35 U.S.C. § 120 to U.S.application Ser. No. 16/124,553, filed Sep. 7, 2018, which is based uponand claims the benefit of priority under 35 U.S.C. § 119 to JapanesePatent Application No. 2018-052449, filed Mar. 20, 2018, the entirecontents of each of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor memorydevice.

BACKGROUND

A NAND flash memory, in which memory cells are three-dimensionallyarranged, has been known as a semiconductor memory device.

BRIEF DESCRIPTION OF THE DRAWING

FIG. 1 is a plan view showing a structure of a semiconductor memorydevice according to embodiments.

FIG. 2 is a cross section of the structure of FIG. 1 , taken along lineA-A′.

FIG. 3 is a cross section of the structure of FIG. 1 , taken along lineB-B′.

FIG. 4 is a cross section of a memory cell array of the semiconductormemory device according to a first embodiment, taken along the Ydirection.

FIG. 5 is a cross section of the main portion of the structure accordingto the first embodiment.

FIGS. 6 to 12 are cross sections of the structure, which representprocesses of a method for manufacturing the semiconductor memory deviceaccording to the first embodiment.

FIG. 13 is a cross section of a semiconductor memory device according toa second embodiment, taken along line A-A′ of FIG. 1 .

FIG. 14 is a cross section of the semiconductor memory device accordingto the second embodiment, taken along line B-B′ of FIG. 1 .

FIG. 15 is a cross section of the main portion of the structureaccording to the second embodiment.

FIGS. 16 to 22 are cross sections of the structure, which representprocesses of a method for manufacturing the semiconductor memory deviceaccording to the second embodiment.

DETAILED DESCRIPTION

In general, according to one embodiment, a semiconductor memory devicecomprises: a stacked body provided above a substrate, in whichconductive layers are isolated from each other and stacked along a firstdirection crossing a surface of the substrate; memory pillars thatextend through the stacked body along the first direction; a firstinsulation layer provided above the memory pillars; an isolation regionprovided higher than upper surfaces of the memory pillars in the stackedbody along the first direction, the isolation region isolating thestacked body in a second direction crossing the first direction; and asecond insulation layer provided on the first insulation layer and aside wall of the isolation region.

The embodiments will be explained with reference to the drawings. In thefollowing explanation, components having the same functions andstructures will be referred to by the same reference numerals. Theembodiments are described to give examples of apparatuses and methodsthat realize the technical concepts of the embodiments.

[1] First Embodiment

The semiconductor memory device according to a first embodiment will bediscussed. Here, as an example of a semiconductor memory device, athree-dimensionally stacked NAND flash memory in which memory celltransistors (hereinafter also referred to as memory cells) are stackedabove the semiconductor substrate will be considered.

[1-1] Structure of Semiconductor Memory Device

FIG. 1 is a plan view showing the structure of the semiconductor memorydevice according to the first embodiment. FIG. 2 is a cross section ofthe structure of FIG. 1 , taken along line A-A′, and FIG. 3 is a crosssection of the structure of FIG. 1 , taken along line B-B′. In FIG. 1 ,two directions that are orthogonal to each other and are both parallelto the surface of the semiconductor substrate are referred to as X and Ydirections, and the direction orthogonal to these X and Y directions(X-Y surface) is referred to as the Z direction. Bit lines are omittedfrom FIGS. 1 to 3 .

The semiconductor memory device includes a memory cell array region 100,a hookup region 200, and a contact region 300, as illustrated in FIG. 1.

The memory cell array region 100 includes a plurality of memory blocks101. The memory blocks 101 each extend in the X direction, and arealigned in the Y direction. Each of the memory blocks 101 has the samestructure.

Each of the memory blocks 101 has a plurality of memory pillars MP. Thememory pillars MP are arranged in a matrix, or in other words, alignedin the X and Y directions. The number of memory pillars MP may bedetermined as needed. Each of the memory pillars MP is coupled to a viaV1 as illustrated in FIGS. 2 and 3 , with a contact CP1 interposedtherebetween.

Slits (isolation regions) ST are provided between the memory blocks 101to extend in the X direction. The slits ST include insulation layers S1and S2. A slit ST isolates the memory blocks 101 into the respective thememory blocks 101. The number of slits ST may be determined as needed.

The hookup region 200 includes a plurality of contacts CP2 coupled toword lines, which will be described later. The contacts CP2 are arrangedin the X direction. The contacts CP2 are coupled to the vias V2, asillustrated in FIG. 2 .

The contact region 300 includes a plurality of through contacts CP3coupled to a peripheral circuit, which will be discussed later. Thethrough contacts CP3 are coupled to the vias V3 with contacts CP4interposed therebetween, as illustrated in FIG. 2 .

As illustrated in FIGS. 2 and 3 , a peripheral circuit region 400 and amemory circuit region 500 are provided on the semiconductor substrate,for example on a silicon substrate 10. The peripheral circuit region 400includes the peripheral circuit for controlling writing, reading, anderasing of data with respect to each memory cell. The peripheral circuitincludes a CMOS circuit 11 having n-channel MOS transistors(hereinafter, nMOS transistors) and p-channel MOS transistors(hereinafter, pMOS transistors). The memory circuit region 500 includesthe aforementioned memory pillars MP, a plurality of word lines WL0 toWL3, a source-side select gate line SGS, a drain-side select gate lineSGD, a source line SL, and bit lines BL, which is not shown.Hereinafter, the “word line WL “denote “each of word lines WL0 to WL3”.The number of word lines WL may be determined as needed.

The sectional structure of the semiconductor memory device taken alongline A-A′ is explained below by referring to FIG. 2 . The CMOS circuit11 including, for example, the nMOS transistors and the pMOStransistors, and vias V4 may be provided on the silicon substrate 10.The vias V4 are coupled to the source, drain, or gate of the nMOStransistor and the pMOS transistor.

A conductive layer (e.g., interconnect or pad) 12 is provided on eachvia V4. A via V5 is provided on the conductive layer 12. A conductivelayer (e.g., interconnect or pad) 13 is provided on the via V5. Aninsulation layer 14 is provided around the CMOS circuit 11, conductivelayers 12 and 13, and vias V4 and V5 on the silicon substrate 10.

A conductive layer 15 is provided on the insulation layer 14. Theconductive layer 15 functions as a source line SL. A plurality ofinsulation layers 16 and a plurality of conductive layers 17 to 22 arealternately stacked on the conductive layer 15 to form a stacked body.The conductive layers 17 to 22 extend in the X direction. The conductivelayer 17 functions as a source-side select gate line SGS, the conductivelayers 18 to 21 function as the word lines WL0 to WL3, respectively, andthe conductive layer 22 functions as a drain-side select gate line SGD.

An insulation layer 23 is provided on the conductive layer 22. Memorypillars MP are provided to extend in the Z direction in the insulationlayers 16, the conductive layers 17 to 22, and the insulation layer 23.One end of each memory pillar MP is coupled to the conductive layer(source line SL) 15, and the other end of the memory pillar MP reachesthe upper surface of the insulation layer 23. That is, the memorypillars MP extend from the source line SL through the insulation layers16, the source-side select gate line SGS, the word lines WL0 to WL3, thedrain-side select gate line SGD, and the insulation layer 23 to reachthe upper surface of the insulation layer 23. The memory pillars MP willbe discussed in more detail later.

Insulation layers 24, 25, S1, and 26 are provided in this order on thememory pillars MP and the insulation layer 23. The contacts CP1 areprovided to extend in the Z direction in the insulation layers 24, 25,S1, and 26 of the memory cell array region 100. Each of the contacts CP1extends from the upper surface of the insulation layer 26 to thecorresponding memory pillar MP, and is coupled to the memory pillar MP.

In the hookup region 200, the conductive layers 17 to 22 are processedinto a stair-like structure along the X direction. An insulation layer16′ is provided on the stair-like conductive layers 17 to 22 to fill inthe steps formed by the stacked body of the conductive layers 17 to 22that are stacked in the memory cell array region 100 so that the uppersurfaces of the memory cell array region 100 and the hookup region 200can be flattened with each other. In the hookup region 200, a pluralityof contacts CP2 are provided to extend in the Z direction in theinsulation layers 16′, 23 to 25, S1, and 26. The contacts CP2 extendfrom the upper surface of the insulation layer 26 to a corresponding oneof the conductive layers 17 to 22, and are coupled to a correspondingone of the source-side select gate line SGS, the word lines WL0 to WL3,and the drain-side select gate line SGD.

In the contact region 300, a through contact CP3 is provided to extendin the Z direction in the insulation layers 14, 16, 23, 24, and theconductive layers 15, 17 to 22. The through contact CP3 extends from theupper surface of the insulation layer 24 to the conductive layer 13, andis coupled to the conductive layer 13. The through contact CP3 will bediscussed later in more detail.

A contact CP4 is provided to extend in the Z direction in the insulationlayer 25, S1, and 26. The contact CP4 extends from the upper surface ofthe insulation layer 26 to the through contact CP3, and is coupled tothe through contact CP3.

Furthermore, an insulation layer 27 is provided on the contacts CP1,CP2, CP4 and the insulation layer 26. In the memory cell array region100, the vias V1 are provided to extend in the Z direction in theinsulation layer 27. Each of the vias V1 extends from the upper surfaceof the insulation layer 27 to the corresponding one of the contacts CP1,and is coupled to the contact CP1. The vias V1 are coupled also to thebit line BL that is not shown.

In the hookup region 200, the vias V2 are provided to extend in the Zdirection in the insulation layer 27. Each of the vias V2 extends fromthe upper surface of the insulation layer 27 to the contact CP2. The viaV2 is coupled to the contact CP2.

In the contact region 300, the vias V3 are provided to extend in the Zdirection in the insulation layer 27. Each of the vias V3 extends fromthe upper surface of the insulation layer 27 to the corresponding one ofthe contacts CP4, and is coupled to the contact CP4.

Next, the cross-sectional structure of the semiconductor memory devicetaken along line B-B′ will be explained by referring to FIG. 3 . Thestructures of the peripheral circuit region 400 and the memory blocks101 including the memory pillars MP that have already been explainedwith reference to FIG. 2 are omitted from the explanation here.

As discussed above, a slit (isolation region) ST is provided between thememory blocks 101 to extend in the X direction. The slit ST isolates thememory blocks 101 from each other. In other words, the slit ST isolates,in the Y direction, the memory cell arrays having memory pillars MP, andalso isolates the stacked bodies of the conductive layers 17 to 22.

The slit ST includes an insulation layer S1 and an insulation layer S2.The insulation layers S1 and S2 are provided in this order on the sidewalls of the insulation layers 16, 24, and 25, and of the conductivelayers 17 to 22 between the memory blocks 101. The insulation layer S1is also provided on the upper surface of the insulation layer 25.

[1-1-1] Structure of Memory Cell Array

Next, the structure of a memory cell array included in the semiconductormemory device according to the first embodiment will be explained withreference to FIG. 4 in detail. FIG. 4 is a cross section of a memorycell array, taken along the Y direction. The insulation layers areomitted in this drawing.

The memory cell array includes a plurality of NAND strings NS. One endof each NAND string NS is coupled to the conductive layer (source lineSL) 15, while the other end of the NAND string NS is coupled to thecontact CP1. The NAND string NS includes a selection transistor ST1,memory transistors MT0 to MT3, and a selection transistor ST2.

The conductive layer (source-side select gate line SGS) 17, theconductive layers (word lines WL0 to WL3) 18 to 21, and the conductivelayer (drain-side select gate line SGD) 22 are stacked on the conductivelayer 15 in such a manner as to be separated from each other, and memorypillars MP are provided on the conductive layer 15 in a manner as topenetrate the conductive layers 17 to 22. The NAND strings NS areprovided at the intersecting portions of the conductive layers 17 to 22and the memory pillars MP.

A memory pillar MP includes, for example, a cell insulation film 30, asemiconductor layer 31, and a core insulation layer 32. The cellinsulation film 30 includes a block insulation film 30A, a chargestorage film 30B, and a tunnel insulation film 30C. In particular, theblock insulation film 30A is provided on the inner wall of a memory holein which a memory pillar MP is to be formed. The charge storage film 30Bis provided on the inner wall of the block insulation film 30A. Thetunnel insulation film 30C is provided on the inner wall of the chargestorage film 30B. The semiconductor layer 31 is provided on the innerwall of the tunnel insulation film 30C. Furthermore, the core insulationlayer 32 is provided inside the semiconductor layer 31.

In the structure of a memory pillar MP, the intersecting portion of thememory pillar MP and the conductive layer 17 functions as a selectiontransistor ST2. The intersecting portions of the memory pillar MP andconductive layers 18 to 21 function as memory transistors MT0 to MT3,respectively. The intersecting portion of the memory pillar MP and theconductive layer 22 functions as the selection transistor ST1.Hereinafter, the “memory transistor MT” denote “each of memorytransistors MT0 to MT3”.

The semiconductor layer 31 functions as a channel layer for the memorytransistors MT and the selection transistors ST1 and ST2.

The charge storage film 30B functions as a charge storage film of amemory transistor MT to accumulate the charge injected from thesemiconductor layer 31. The charge storage film 30B includes, forexample, a silicon nitride film.

The tunnel insulation film 30C functions as a potential barrier when thecharge is injected from the semiconductor layer 31 into the chargestorage film 30B, or when the charge accumulated in the charge storagefilm 30B is diffused into the semiconductor layer 31. The tunnelinsulation film 30C includes, for example, a silicon oxide film.

The block insulation film 30A prevents the charge accumulated in thecharge storage film 30B from diffusing into the conductive layers (wordlines WL) 18 to 21. The block insulation film 30A includes, for example,a silicon oxide film and a silicon nitride film.

[1-1-2] Main Structure of First Embodiment

The main structure of the semiconductor memory device according to thefirst embodiment will be explained next, with reference to FIG. 5 . FIG.5 is a cross section of the main structure according to the firstembodiment, taken along the Y direction. For the sake of simplicity, theslit ST, the memory pillars MP, and the through contact CP3 areillustrated as being aligned in this drawing.

The memory pillars MP are provided in the insulation layers 16, theconductive layers 17 to 22, and the insulation layer 23 on theconductive layer (source line SL) 15. Each of the memory pillars MP hasa pillar structure (or columnar shape) extending in the Z direction thatis orthogonal to the surface of the silicon substrate 10. The insulationlayer 24 is provided above the memory pillars MP and on the insulationlayer 23. The insulation layers 23 and 24 include, for example, asilicon oxide layer.

The through contact CP3 is provided in the conductive layer 15, theinsulation layers 16, the conductive layers 17 to 22, and the insulationlayers 23 and 24. That is, the through contact CP3 is provided topenetrate the conductive layer 15, the insulation layers 16, theconductive layers 17 to 22, and the insulation layers 23 and 24. Thethrough contact CP3 includes an insulation layer CP3 a and a conductivelayer CP3 b. The insulation layer CP3 a includes, for example, a siliconoxide layer. The conductive layer CP3 b includes, for example, tungsten.The insulation layer 25 is provided on the through contact CP3 and theinsulation layer 24. The insulation layer includes, for example, asilicon oxide layer.

As illustrated in FIG. 3 , a slit (isolation region) ST is providedbetween the memory blocks 101. With reference to FIG. 5 , the insulationlayer S1 is provided on the side walls of the insulation layers 16, theconductive layers 17 to 22, and the insulation layers 23, 24, and 25.The insulation layer S1 is also provided on the insulation layer 25. Inaddition, the insulation layer S2 is provided on the side wall of theinsulation layer S1 in the slit ST. The insulation layer S2 has aplate-like structure extending in the Z direction that is orthogonal tothe surface of the silicon substrate 10. The insulation layer S1includes, for example, a silicon nitride layer, silicon carbide (SiC)layer, or metal oxide layer (e.g., aluminum oxide layer and hafniumoxide layer). The insulation layer S2 includes, for example, a siliconoxide layer.

The insulation layer 26 is provided on the insulation layers S1 and S2.The contacts CP1 are provided on the memory pillars MP in the insulationlayers 24, 25, S1, and 26. The contact CP4 is provided on the throughcontact CP3 in the insulation layers 25, S1, and 26. The insulationlayer 26 includes, for example, a silicon oxide layer.

The insulation layer 27 is provided on the contacts CP1, the throughcontact CP3, and the insulation layer 26. The vias V1 are provided onthe contact CP1 in the insulation layer 27. The via V3 is provided onthe contact CP4 in the insulation layer 27. The insulation layer 27includes, for example, a silicon oxide layer. The vias V1 and V3includes, for example, tungsten.

[1-2] Manufacturing Method of Semiconductor Memory Device

Next, the manufacturing method of the semiconductor memory deviceaccording to the first embodiment will be explained with reference toFIGS. 6 to 12 , and also FIG. 5 . FIGS. 6 to 12 are cross sections of astructure, representing the processes of the method for manufacturingthe semiconductor memory device according to the first embodiment.

As illustrated in FIG. 6 , a plurality of insulation layers (siliconoxide layers) 16 and a plurality of insulation layers (silicon nitridelayers) 28 are alternately stacked on the conductive layer 15. Theinsulation layer 23 is formed on the top insulation layer 28.

Next, a memory pillar MP is formed in the insulation layers 16, theinsulation layers 28, and the insulation layer 23 on the conductivelayer 15. Thereafter, the insulation layer 24 is formed by CVD on thememory pillar MP and the insulation layer 23. Then, a contact formationhole 29 is formed by RIE in the insulation layers 23 and 24, theinsulation layers 16, the insulation layers 28, and the conductive layer15.

As illustrated in FIG. 7 , an insulation layer CP3 a is formed by CVD onthe side walls of the contact formation hole 29. Then, the insulationlayer CP3 a is removed by RIE from the bottom surface of the contactformation hole 29. Thereafter, a conductive layer CP3 b is formed in thecontact formation hole 29. In this manner, a through contact CP3 isformed in the contact formation hole 29. Furthermore, an insulationlayer is formed by CVD on the through contact CP3 and insulation layer24.

As illustrated in FIG. 8 , the stacked body of the insulation layers 23to 25, the insulation layers (silicon oxide layers) 16, and theinsulation layers (silicon nitride layers) 28 is etched by RIE to form aslit formation trench 40.

The insulation layers (silicon nitride layers) 28 are removed by wetetching using, for example, a phosphoric acid solution introduced fromthe slit formation trench 40. The insulation layers 16, 23 to 25, on theother hand, will remain without being removed. In this manner, gaps areformed between the insulation layers 16. These gaps between theinsulation layers 16 are filled by CVD with a conductive material suchas tungsten as illustrated in FIG. 9 . As a result, the conductive layer(source-side select gate line SGS) 17, the conductive layers (word linesWL0 to WL3) 18 to 21, and the conductive layer (drain-side select gateline SGD) 22 are formed.

Next, as illustrated in FIG. 10 , the insulation layer (silicon nitridelayer) S1 is formed by CVD on the side walls of the slit formationtrench 40 and on the upper surface of the insulation layer 25. In orderto fill the slit formation trench 40 with the insulation layer (siliconoxide layer) S2, the insulation layer S2 is deposited by CVD on theinsulation layer S1. As illustrated in FIG. 11 , the insulation layer S2over the slit formation trench 40 and on the insulation layer S1 isremoved by etching back so that the surfaces of the slit ST andinsulation layer S1 can be flattened with each other.

Next, the insulation layer 26 is formed by CVD on the insulation layersS1 and S2, as illustrated in FIG. 12 . Thereafter, portions of theinsulation layers 24, 25, S1, and 26 on the memory pillars MP are etchedby RIE to form contact formation holes. The insulation layers 25, S1,and 26 on the through contact CP3 are also etched to forma contactformation hole. These contact formation holes are filled with tungstenby CVD. In this manner, the contacts CP1 are formed on the memorypillars MP, and the contact CP4 is formed on the through contact CP3.

Next, as illustrated in FIG. 5 , the insulation layer 27 is formed byCVD on the contacts CP1, CP4, and the insulation layer 26. The portionsof the insulation layer 27 on the contacts CP1 and CP4 are etched by RIEto form via formation holes, and the via formation holes are filled withtungsten by CVD. In this manner, vias V1 and V3 are formed on thecontacts CP1 and CP4, respectively. Finally, bit lines and otherinterconnects, as well as insulation layers are formed so that themanufacturing process of the semiconductor memory device is completed.

[1-3] Effects of First Embodiment

According to the first embodiment, the insulation layer (e.g., siliconnitride layer) S1 is provided on the inner walls of the slit STformation trench and on the upper surface of the insulation layer (e.g.,silicon oxide layer) 25, as described above. Thus, when etching theinsulation layer (e.g., silicon oxide layer) S2 on the insulation layer(silicon nitride layer) S1, the insulation layer (silicon oxide layer)underneath the insulation layer (silicon nitride layer) S1 can beprevented from being etched. In this manner, the height from each memorypillar MP to the insulation layer (silicon nitride layer) S1 (i.e., thethickness of the silicon oxide layers) can be controlled to attain apredetermined length.

Specifically, during the process of filling the slit ST formation trenchwith an insulation layer (silicon oxide layer) S2, the insulation layer(silicon oxide layer) S2 is deposited on the insulation layer (siliconnitride layer) S1 on the insulation layer (silicon oxide layer) 25 as aresult of the formation of the insulation layer (silicon oxide layer) S2in the slit ST formation trench. When etching back the silicon oxidelayer over the slit ST and on the insulation layer (silicon nitridelayer) S1, the etching of the insulation layer (silicon oxide layer) S2will be stopped at the insulation layer (silicon nitride layer) S1. Thatis, the insulation layer (silicon nitride layer) S1 will serve as anetching stopper, thus preventing the insulation layer 25 underneath theinsulation layer (silicon nitride layer) S1 from being etched. In thismanner, the insulation layers provided between the memory pillar MP andthe insulation layer (silicon nitride layer) S1 can be controlled tohave a predetermined thickness.

Thereafter, the hole for the contact CP1 that is to be coupled to thememory pillar MP is formed. At this point, because the insulation layersbetween the memory pillar MP and the insulation layer (silicon nitridelayer) S1 have a predetermined thickness, there is no need to considerthe processing variations when determining a depth of the contact CP1formation hole to be etched. As a result, any defect that tends to occurduring the formation of the contact CP1, such as a contact CP1 beingwrongly coupled to the drain-side select gate line SGD, can besuppressed.

In addition, slits (isolation regions) ST are provided between thememory blocks 101 (or between memory cell arrays, or between memorypillars), and each slit ST isolates the memory blocks 101 from eachother. The insulation layer (silicon nitride layer) S1 is formed on theside walls of the slit ST and on the upper surface of the insulationlayer 25. In the subsequent heat treatment, hydrogen is diffused fromthis silicon nitride layer. The diffused hydrogen can effectivelyterminate the dangling bonds that exist in the channel of the memorytransistors MT. Thus, by covering with the insulation layer (siliconnitride layer) S1 the memory blocks 101 in which the memory transistorsMT are arranged, the cell current that appears in the memory transistorsMT can be effectively dealt with.

As discussed above, the reliability of the semiconductor memory devicecan be improved according to the first embodiment.

[2] Second Embodiment

Next, a semiconductor memory device according to a second embodimentwill be explained. In the second embodiment, the contacts CP1 andthrough contacts CP3 are formed in the same process after the formationof the memory pillars MP. The explanation of the second embodiment willfocus mainly on the points that differ from the first embodiment.

[2-1] Structure of Semiconductor Memory Device

The plan view of the semiconductor memory device according to the secondembodiment is the same as FIG. 1 . FIG. 13 is a cross section of thestructure according to the second embodiment, taken along line A-A′ ofFIG. 1 . FIG. 14 is a cross section of the structure, taken along lineB-B′ of FIG. 1 .

As illustrated in FIGS. 13 and 14 , contacts CP1 are provided on thememory pillars MP in the insulation layer 24. Furthermore, vias V1 areprovided on the contacts CP1 in the insulation layers 25, S1, 26, and27. The memory pillars MP are thereby coupled to the vias V1 with thecontacts CP1 interposed therebetween. The via V3 is provided on thethrough contact CP3 in the insulation layers 25, S1, 26, and 27. Thethrough contact CP3 is coupled to the via V3.

[2-1-1] Main Structure of Second Embodiment

The main structure of the semiconductor memory device according to thesecond embodiment will be explained with reference to FIG. 15 . FIG. 15is a cross section of the main structure according to the secondembodiment, taken along the Y direction. For the sake of simplicity, theslit ST, memory pillars MP, and through contact CP3 are illustrated asbeing aligned in this drawing.

The memory pillars MP are provided in the plurality of insulation layers16, the conductive layers 17 to 22, and the insulation layer 23 on theconductive layer (source line SL) The insulation layer 24 is providedabove the memory pillars MP and on insulation layer 23. The contacts CP1are provided on the memory pillars MP in the insulation layer 24.

The through contact CP3 is provided in the conductive layer 15, theinsulation layers 16, the conductive layers 17 to 22, and the insulationlayers 23 and 24. That is, the through contact CP3 is formed topenetrate the conductive layer 15, the insulation layers 16, theconductive layers 17 to 22, and the insulation layers 23 and 24. Theinsulation layer 25 is provided on the contacts CP1, the through contactCP3, and the insulation layer 24.

As illustrated in FIG. 14 , slits ST are provided between the memoryblocks 101. With reference to FIG. 15 , the insulation layer S1 isprovided on the side walls of the insulation layers 16, the conductivelayers 17 to 22, and the insulation layers 23, 24, and 25. Theinsulation layer S1 is also provided on the insulation layer 25.Furthermore, the insulation layer S2 is formed on the side walls of theinsulation layer S1 in the slit ST. The insulation layer S1 includes,for example, a silicon nitride layer, a silicon carbide (SiC) layer, ora metal oxide layer (e.g., aluminum oxide layer and hafnium oxidelayer). The insulation layer S2 includes, for example, a silicon oxidelayer.

The insulation layers 26 and 27 are formed in this order on theinsulation layers S1 and S2. The vias V1 are provided on the contact CP1in the insulation layers 25, S1, 26, and 27. The via V3 is provided onthe through contact CP3 in the insulation layers 25, S1, 26, and 27.

[2-2] Manufacturing Method of Semiconductor Memory Device

Next, the manufacturing method of the semiconductor memory deviceaccording to the second embodiment will be explained with reference toFIGS. 16 to 22 , and also FIG. 15 . FIGS. 16 to 22 are cross sections ofa structure, which represent processes of the method for manufacturingthe semiconductor memory device according to the second embodiment.

First, memory pillars MP are formed on the conductive layer 15 in theinsulation layers 16, the insulation layers 28, and the insulation layer23, as illustrated in FIG. 16 . Thereafter, the insulation layer 24 isformed by CVD on the memory pillar MP and insulation layer 23, and thena contact formation hole 29 is formed by RIE in the insulation layers 23and 24, the insulation layers 16, the insulation layers 28, and theconductive layer 15. An insulation layer CP3 a is formed by CVD on theside walls of the contact formation hole 29 and on the upper surface ofthe insulation layer 24. The insulation layer CP3 a includes, forexample, a silicon oxide layer.

Next, contact formation holes are formed by RIE in the insulation layer24 and the insulation layer CP3 a on the memory pillars MP, and theinsulation layer CP3 a on the bottom of the contact formation hole 29and on the insulation layer 24 are removed. Next, the conductive layerCP3 b is formed in the contact formation holes on the memory pillars MPand also in the contact formation hole 29, as illustrated in FIG. 17 .The conductive layer CP3 b includes, for example, tungsten. In thismanner, the contacts CP1 and the through contact CP3 are formed.

Next, the insulation layer 25 is formed by CVD on the contacts CP1, thethrough contact CP3 and the insulation layer 24, as illustrated in FIG.18 .

Thereafter, the stacked body including the insulation layers 23 to 25,the insulation layers (silicon oxide layers) 16 and the insulationlayers (silicon nitride layers) 28 is etched by RIE to prepare a slitformation trench 40, as illustrated in FIG. 19 .

Thereafter, the insulation layers (silicon nitride layers) 28 areremoved by wet etching using, for example, a phosphoric acid solutionintroduced from the slit formation trench 40. On the other hand, theinsulation layers 16, 23 to remain, without being removed, as a resultof which gaps are formed between the insulation layers 16. These gapsbetween the insulation layers 16 are filled by CVD with a conductivematerial such as tungsten as illustrated in FIG. 20 . As a result, theconductive layer (source-side select gate line SGS) 17, the conductivelayers (word lines WL0 to WL3) 18 to 21, and the conductive layer(drain-side select gate line SGD) 22 are formed.

Next, as illustrated in FIG. 21 , the insulation layer (silicon nitridelayer) S1 is formed by CVD on the side walls of the slit formationtrench 40 and on the upper surface of the insulation layer 25. In orderto fill the slit formation trench 40 with the insulation layer (siliconoxide layer) S2, the insulation layer S2 is deposited by CVD on theinsulation layer S1. As illustrated in FIG. 22 , portions of theinsulation layer S2 over the slit formation trench 40 and on theinsulation layer S1 are removed by etching back so that the surfaces ofthe slit ST and the insulation layer S1 can be flattened with eachother.

Next, the insulation layers 26 and 27 are formed by CVD on theinsulation layers S1 and S2, as illustrated in FIG. 15 . Thereafter,portions of the insulation layers 25, S1, 26, and 27 on the contact CP1are etched by RIE to form holes for via formation. Portions of theinsulation layers 25, S1, 26, and 27 on the through contact CP3 are alsoetched to form the via formation holes. The via formation holes arefilled with tungsten by CVD. In this manner, the vias V1 are formed onthe contact CP1, and the via V3 is formed on the through contact CP3.Thereafter, bit lines, other interconnects, and insulation layers areformed, and the manufacturing process of the semiconductor memory deviceis completed.

[2-3] Effects of Second Embodiment

According to the second embodiment, the reliability of the semiconductormemory device can be enhanced as in the above first embodiment.

In addition, according to the second embodiment, the contact CP1 and thethrough contact CP3 can be prepared in the same process. The number ofprocesses therefore can be reduced in comparison with the firstembodiment. Other effects are the same as in the first embodiment.

[3] Other Modification Examples

In the above embodiments, “coupling” indicates not only components beingdirectly coupled to each other, but also components being coupled toeach other with another component interposed therebetween.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinvention. The accompanying claims and their equivalents are intended tocover such forms or modifications as would fall within the scope andspirit of the invention.

What is claimed is:
 1. A semiconductor memory device comprising: astacked body provided above a substrate, in which conductive layers areisolated from each other and stacked along a first direction crossing asurface of the substrate; a source layer provided between the substrateand the stacked body; memory pillars passing through the stacked bodyalong the first direction, one ends of the memory pillars being coupledto the source layer respectively; first contacts coupled to the otherends of the memory pillars respectively; first vias of which one endsare coupled to the first contacts and the other ends are coupled to bitlines respectively; a first insulation film provided above the stackedbody, the first insulation film being located higher than upper surfacesof the memory pillars in the first direction; isolation portions passingthrough the stacked body and the first insulation film along the firstdirection, extending in a second direction crossing the first directionand isolating the stacked body in a third direction crossing the firstdirection and the second direction; a first member including silicon andnitrogen provided above the first insulation film, the first memberbeing located between the one ends and the other ends of the first viasin the first direction; through contacts provided in holes formedthrough the first insulation film and the stacked body along the firstdirection within a region between two isolation portions adjacent in thethird direction of the isolation portions; and a lower interconnectprovided between the substrate and the source layer, wherein a firstthrough contact of the through contacts is provided in one hole of theholes, the first through contact having a side wall insulation layerprovided on a side wall of the one hole and any through contact otherthan the first through contact being not provided in the one hole, andthe first through contact is electrically connected to the lowerinterconnect while being electrically insulated from the source layer.2. The semiconductor memory device according to claim 1, furthercomprising a second member including silicon and nitrogen provided onside walls of the isolation portions.
 3. The semiconductor memory deviceaccording to claim 2, wherein each of the memory pillars has a columnarshape extending in the first direction, each of the isolation portionshas a plate shape extending in the first direction, and the secondmember is arranged between the memory pillars and a first isolationportion of the two isolation portions and between the memory pillars anda second isolation portion of the two isolation portions.
 4. Thesemiconductor memory device according to claim 1, wherein the firstinsulation film and the isolation portions include silicon oxide.
 5. Thesemiconductor memory device according to claim 1, wherein intersectionsof the memory pillars and the conductive layers respectively function asmemory cells.
 6. The semiconductor memory device according to claim 1,wherein each of the memory pillars includes a charge storage film, atunnel insulation film, and a semiconductor layer.
 7. The semiconductormemory device according to claim 1, wherein the first contacts passthrough the first insulation film along the first direction.
 8. Thesemiconductor memory device according to claim 7, wherein the firstcontacts include tungsten.
 9. The semiconductor memory device accordingto claim 1, further comprising a second via of which one end is coupledto the first through contact, the first member being located between theone end and the other end of the second via in the first direction. 10.The semiconductor memory device according to claim 9, wherein the firstvias include tungsten.
 11. The semiconductor memory device according toclaim 9, wherein the second via includes tungsten.
 12. The semiconductormemory device according to claim 9, wherein lower surfaces of the firstvias are provided at a substantially same height as a lower surface ofthe second via in the first direction.
 13. The semiconductor memorydevice according to claim 1, wherein the side wall insulation layerincludes silicon oxide.
 14. The semiconductor memory device according toclaim 1, wherein each of the through contacts has a conductive memberinside the side wall insulation layer, the conductive member includingtungsten.
 15. The semiconductor memory device according to claim 1,wherein the first through contact has a conductive member inside theside wall insulation layer, lower ends of the conductive member and theside wall insulation layer terminating at a substantially same height.16. The semiconductor memory device according to claim 1, wherein thethrough contacts each have the side wall insulation layer and isprovided in corresponding one hole of the holes respectively within theregion between the two isolation portions adjacent in the thirddirection.
 17. The semiconductor memory device according to claim 16,wherein each of the through contacts includes a conductive member insidethe side wall insulation layer and the side wall insulation layerelectrically insulates between each of the through contacts and theconductive layers in the stacked body.
 18. The semiconductor memorydevice according to claim 16, wherein the through contacts are providedalong the third direction between the two isolation portions adjacent inthe third direction.
 19. The semiconductor memory device according toclaim 16, wherein the through contacts are provided in respectivepositions of the stacked body not isolated from each other.
 20. Thesemiconductor memory device according to claim 1, further comprising aperipheral circuit provided below the lower interconnect, the thoughcontacts being coupled to the peripheral circuit.